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Elemental engineering: Epitaxial uranium thin films
DOI:10.1103/PhysRevB.78.193403.png)
摘要
En 中文
Epitaxial films of the well-known alpha (orthorhombic) structure and an unusual hcp form of uranium have been grown on Nb and Gd buffers, respectively, by sputtering techniques. In a 5000 A film of alpha-U a charge-density wave has been observed, and its properties are different from those found in the bulk. The 500 A hcp-U film has a c/a ratio of 1.90(1), which is unusually large for the hcp structure. Theoretical calculations show that this hcp form is metastable and predict that it orders magnetically.
Keyword:
buffer layers
charge density waves
crystal structure
gadolinium
magnetic epitaxial layers
niobium
sputter deposition
uranium
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期刊
IF:
3.7
论文数:
15.4W
被引数:
41.0W
机构
引用论文
Observation of 5f states in U/W(110) films by means of scanning tunneling spectroscopy -: art. no. 113401
PHYSICAL REVIEW B
IF3.7
Dispersion of 5f electron states: Angle-resolved photoemission on ordered films of U metal
PHYSICAL REVIEW B
IF3.7

