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Engineering interfacial charge transfer through modulation doping for 2D electronics
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DOI：10.1103/PhysRevMaterials.9.L021601.png)
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摘要
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Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their applicability. Here, we investigate work-function-mediated charge transfer (modulation doping) as a pathway for achieving high-performance p-type 2D transistors. Focusing on type-III band alignment, we explore the doping capabilities of 27 candidate materials, including transition metal oxides, oxyhalides, and alpha-RuCl3, on channel materials such as transition metal dichalcogenides (TMDs) and group-III nitrides. Our extensive first-principles density functional theory (DFT) reveal p-type doping capabilities of high electron affinity materials, including alpha-RuCl3, MoO3, and V2O5. We predict significant reductions in contact resistance and enhanced channel mobility through efficient hole transfer without introducing detrimental defects. We analyze transistor geometries and identify promising material combinations beyond the current focus on WSe2 doping, suggesting new avenues for hBN, AlN, GaN, and MoS2. This comprehensive investigation provides a roadmap for developing high-performance p-type monolayer transistors toward the realization of 2D electronics.
Keyword:
ELECTRIC-FIELD
SEMICONDUCTORS
TEMPERATURE
TRANSITION
GRAPHENE
DENSITY
SURFACE
期刊
IF:
3.4
论文数:
5.2K
被引数:
1.7W
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引用论文
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