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Enhancing GaN Nanowires Performance Through Partial Coverage with Oxide Shells
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DOI：10.1002/smll.202401139.png)
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Core-shell gallium nitride (GaN)-based nanowires offer noteworthy opportunities for innovation in high-frequency opto- and microelectronics. This work delves deeply into the physical properties of crystalline GaN nanowires with aluminum and hafnium oxide shells. Particular attention is paid to partial coverage of nanowires, resulting with exceptional properties. First, the crystal lattice relaxation is observed by X-ray diffraction, photoluminescence, and Raman spectroscopy measurements. A high potential of partial coverage for optoelectronic applications is revealed with photo- and cathodoluminescence spectra along with an exploration of their temperature dependency. Next, the study focuses on understanding the mechanisms behind the observed enhancement of the luminescence efficiency. It is confirmed that nanowires are effectively protected against photoadsorption using partial coatings. This research advances the frontiers of nanotechnology, investigating the benefits of partial coverage, and shedding light on its complex interaction with cores. This work demonstrates the improvement of the structural and optical properties of core-shell GaN nanowires achieved through partial coverage with wide bandgap oxide shells, specifically AlOx and HfOx. This approach is proposed to protect the nanowires against photodegradation. It provides a reduction of crystal lattice strain in the nanowires. Additionally, an enhancement in both photo- and cathodoluminescence intensity is observed. image
Keyword:
core-shell
GaN
nanowires
photoluminescence
strain
wide bandgap oxides
期刊
IF:
12.1
论文数:
3.0W
被引数:
16.4W
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Phonon dispersion and Raman scattering in hexagonal GaN and AlN六方GaN和AlN中的声子色散和拉曼散射.png)
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