Excitonic devices

doi:10.1016/j.spmi.2016.12.035

2017-08-01

107

L. V. Butov *

DOI：10.1016/j.spmi.2016.12.035

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摘要

En 中文

Indirect excitons can be controlled by voltage, can travel over large distances before recombination, and can cool down close to the temperature of semiconductor crystal lattice and below the temperature of quantum degeneracy. These properties form the basis for the development of excitonic devices with indirect excitons. In this contribution, we overview our studies of excitonic devices. We present traps, lattices, conveyers, and ramps for studying basic properties of cold indirect excitons - cold bosons in semiconductor materials. We also present proof-of-principle demonstration for excitonic signal processing devices. (C) 2017 Elsevier Ltd. All rights reserved.

Keyword:

BOSE-EINSTEIN CONDENSATION

ELECTRON-HOLE PLASMA

QUANTUM-WELLS

NOBEL LECTURE

OPTICAL-PROPERTIES

SPIN MEMORY

PHOTOLUMINESCENCE

STORAGE

LIGHT

STATE

AI总结

对已上传原文的论文进行重点信息的提取，主要内容包括：简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。

期刊

Superlattices and Microstructures

IF:

3.3

论文数:

6.8K

被引数:

9.0K

机构

University of California System

学者数:

37.7W

论文数: 33.8W

被引数: 6.6K

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