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Exploring Spin Transfer Torque Devices for Unconventional Computing
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DOI：10.1109/JETCAS.2015.2405171.png)
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摘要
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This paper reviews the potential of spin-transfer torque devices as an alternative to complementary metal-oxide-semiconductor for non-von Neumann and non-Boolean computing. Recent experiments on spin-transfer torque devices have demonstrated high-speed magnetization switching of nanoscale magnets with small current densities. Coupled with other properties, such as nonvolatility, zero leakage current, high integration density, we discuss that the spin-transfer torque devices can be inherently suitable for some unconventional computing models for information processing. We review several spintronic devices in which magnetization can be manipulated by current induced spin transfer torque and explore their applications in neuromorphic computing and reconfigurable memory-based computing.
Keyword:
Domain wall motion
in-memory computing
magnetic tunnel junction
neuromorphic computing
spin torque oscillator
spin transfer torque
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