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Fabrication of Schottky barrier diodes with the lithium fluoride interface layer and electrical characterization in a wide temperature range
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DOI：10.1016/j.jallcom.2019.152601.png)
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Abstract
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In this study, lithium fluoride (LiF) was deposited as an interface layer between metal and p-type silicon (p-Si) wafer by thermal evaporation and, thus, the Cr/LiF/p-Si/Al Schottky type diode structures were obtained. The basic diode parameters such as ideality factory (n) and barrier height (Phi(b)) were calculated using the thermionic emission (TE) theory. The results showed that the ideality factors and barrier height values of the Cr/LiF/p-Si/Al devices varied from 1.37 to 1.48 eV and 0.74-0.79 eV at 300K, respectively. These value for the reference Cr/p-Si/Al device, which was obtained under the same conditions with the Cr/LiF/p-Si/Al devices, were 1.75 and 0.69 eV, respectively. The presence of the LiF layer between the metal and the semiconductor reduced the ideality factor of the device and increased the barrier height. These results were evaluated and the I-V measurements of a relatively good device of a Cr/LiF/p-Si/Al Schottky barrier diode called D2 were carried out within a wide temperature range. Various basic diode parameters such as n, Phi(b) and series resistance (R-s) of the device were calculated from I-V measurements by using different methods such as TE, Cheung and Norde functions within the 280 K-400 K range. It was determined that as the temperature value increased, series resistance and ideal factor decreased. However, the barrier height of the device increased. All these obtained results show that the current transmission mechanism is compatible with the TE theory. In addition, Fermi energy level, diffusion potential, carrier concentration and barrier height were calculated from the capacitance-voltage (C-V) measurements of the D2 device as a function of frequency at 300 K. (C) 2019 Elsevier B.V. All rights reserved.
Keywords:
Schottky barrier diode
Lithium fluoride
Buffer layer
Interface layer
Inorganic compound
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