Ferroelectrically Switchable Half-Quantized Hall Effect

doi:10.1021/acs.nanolett.5c00550

2025-04-24

PRE

SHEN, Shunqing (Shun-Qing Shen) *

张

张震宇 (Zhenyu Zhang) *

DOI：10.1021/acs.nanolett.5c00550

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摘要

En 中文

将铁电性、反铁磁性以及拓扑量子输运集成于单一材料中虽罕见，但对开发下一代量子器件至关重要。本文提出了一种由反铁磁MnBi2Te4双层和Sb2Te3薄膜构成的多铁异质结构，能够承载具有铁电调控的半量子霍尔（HQH）效应，其霍尔电导为±e²/2h。我们首先表明，在能量稳定构型下，反铁磁MnBi2Te4双层通过近邻效应在Sb2Te3的顶表面能带中打开能隙，而其底表面能带保持无能隙；因此，HQH电导e²/2h可依据MnBi2Te4的反铁磁构型维持顺时针或逆时针方向。值得注意的是，当对MnBi2Te4双层施加层间滑移时，其与宇称-时间反演对称性破缺相关的电极化方向发生反转，伴随HQH电导的反转。该提出的方案为通过铁电性调控反铁磁材料中的拓扑量子输运提供了有效途径。

Keyword:

half-quantized Hall effect

anomalous Hall effect

antiferromagnetism

ferroelectricity

magnetoelectriceffect

quantum transport

期刊

Nano Letters

IF:

9.1

论文数:

2.7W

被引数:

16.5W

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Univ Hong Kong

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2.6K

论文数: 1.5K

被引数: 532

University of Science and Technology of China

学者数:

1.7W

论文数: 6.0K

被引数: 11.3W

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