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摘要
En 中文
Handheld devices, such as smartphones and tablets, currently dominate the semiconductor market. The memory access patterns of CPU and IP cores are dramatically different in a handheld device, making the main memory a critical bottleneck of the entire system. As a result, non-volatile memories, such as spin transfer torque magnetoresistive random-access memory (STT-MRAM), are emerging as a replacement for the existing DRAM-based main memory, achieving a wide variety of advantages. However, replacing DRAM with STT-MRAM also results in new design challenges including read disturbance. A simple read-and-restore scheme preserves data integrity under read disturbance, but incurs significant performance and energy overheads. Consequently, by utilizing unique characteristics of mobile applications, we propose FlowPaP, a flow pattern prediction scheme to dynamically predict the write-to-last-read distances for data frames running on a handheld device. FlowPaP identifies and removes unnecessary memory restores originally required for preventing read disturbance, significantly improving energy efficiency and performance for STT-MRAM-based handheld devices. In addition, we propose a flow-based data retention time reduction scheme named FlowReR to further lower energy consumption of STT-MRAM at the expense of reducing its data retention time. FlowReR imposes a second step that marginally trades off the already improved energy efficiency for performance improvements. Experimental results show that, compared to the original read-and-restore scheme, the application of FlowPaP and FlowReR together can simultaneously improve energy efficiency by 34% and performance by 17% for a set of commonly used Android applications.
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