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Fractional memristor

delete2017-12-11
delete27
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OA
AI
F
Frank Z. Wang *
L
Luping Shi
H
Huaqiang Wu
N
Na Helian
L
Leon O. Chua
DOI:10.1063/1.5000919delete
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摘要

摘要

En 中文
Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spin-transfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 fractional memristor. In conclusion, many memristors should not be treated as ideal ones due to the fractional interaction between flux and charge. Indeed, unless a non-ideal memristor Is properly modelled as a fractional memristor, no deep physical understanding would be possible to develop a reliable commercial product. Published by AIP Publishing.
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Applied Physics Letters 封面图
Applied Physics Letters
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3.6
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10.4W
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