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From lab to fab: path forward for 2D material electronics
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DOI：10.1007/s11432-023-3752-3.png)
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The increasing demand for computation requires the development of energy-efficient logic devices with reduced dimensions. Owing to their atomic thickness, 2D semiconductors are expected to provide possible solutions at the sub-1 nm technology node. Furthermore, taking advantage of the van der Waals nature, the low-temperature back-end of line integration with silicon may occur in the near future. In this perspective, vital progress in material synthesis, device engineering, and integration technologies toward integrated circuits based on 2D materials is reviewed. The challenges and important milestones on the roadmap for the next decade toward the fab adoption of 2D materials are outlined. Particularly, performance, power, area, cost, and equipment for further technology development in this area are proposed as key metrics and enablers.
Keyword:
two-dimensional materials
transition-metal dichalcogenides
equipment
integrated circuits
roadmap
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