.png){kind=icon}
返回
Full-color capable light-emitting diodes based on solution-processed quantum dot layer stacking
.png){kind=icon}
PRE
AI
DOI：10.1039/c8nr00307f.png)
.png){kind=icon}
原文求助.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
To date, most of the studies on quantum dot-light-emitting diodes (QLEDs) have been dedicated to the fabrication of high-efficiency monochromatic devices. However, for the ultimate application of QLEDs to the next-generation display devices, QLEDs should possess a full-color emissivity. In this study, we report the fabrication of all-solution-processed full-color-capable white QLEDs with a standard device architecture, where sequentially stacked blue (B)/green (G)/red (R) quantum dot (QD)-emitting layers (EMLs) are sandwiched by poly(9-vinylcarbazole) as the hole transport layer and ZnO nanoparticles (NPs) as the electron transport layer. To produce interlayer mixing-free, well-defined B/G/R QD layering assemblies via successive spin casting, an ultrathin ZnO NP buffer is inserted between different-colored QD layers. The present full-color-capable white QLED exhibits high device performance with the maximum values of 16241 cd m(-2) for luminance and 6.8% for external quantum efficiency. The promising results indicate that our novel EML design of ZnO NP buffer-mediated QD layer stacking may afford a viable means towards bright, efficient full-color-capable white devices.
Keyword:
HIGHLY EFFICIENT
PERFORMANCE
DEVICES
MULTILAYER
AI总结
对已上传原文的论文进行重点信息的提取，主要内容包括：简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
IF:
5.1
论文数:
3.0W
被引数:
11.6W
机构
引用论文
Influence of Shell Thickness on the Performance of Light-Emitting Devices Based on CdSe/Zn1-XCdXS Core/Shell Heterostructured Quantum Dots壳层厚度对CdSe/Zn1-XCdXS核/壳异质结构量子点发光器件性能的影响.png)
ADVANCED MATERIALS
ADVANCED MATERIALSIF26.8
PREAI
分享收藏Multicolored Light-Emitting Diodes Based on All-Quantum-Dot Multilayer Films Using Layer-by-Layer Assembly Method基于逐层组装方法的基于全量子点多层膜的多色发光二极管NANO LETTERS
NANO LETTERSIF9.1
PREAI
分享收藏Wearable red-green-blue quantum dot light-emitting diode array using high-resolution intaglio transfer printing采用高分辨率凹版转印的可穿戴红绿蓝量子点发光二极管阵列NATURE COMMUNICATIONS
OAAI
NATURE COMMUNICATIONSIF15.7
OAAI分享收藏Full-colour quantum dot displays fabricated by transfer printing转印法制备全色量子点显示器NATURE PHOTONICS
NATURE PHOTONICSIF32.9
PREAI
分享收藏Effects of genotoxicity and its consequences at the population level in sexual and asexual Artemia assessed by analysis of inter-simple sequence repeats (ISSR)通过分析简单序列间重复序列 (ISSR) 评估了性和无性卤虫在种群水平上的遗传毒性及其后果
PREAI
分享收藏Hexamethyldisilazane-mediated, full-solutionprocessed inverted quantum dot-light-emitting diodes
PREAI
分享收藏Efficient All-Solution Processed Quantum Dot Light Emitting Diodes Based on Inkjet Printing Technique基于喷墨打印技术的高效全溶液处理量子点发光二极管
PREAI
分享收藏High-Resolution Patterns of Quantum Dots Formed by Electrohydrodynamic Jet Printing for Light-Emitting Diodes通过用于发光二极管的电流体动力喷射印刷形成的量子点的高分辨率图案NANO LETTERSOAAI
NANO LETTERSIF9.1
OAAI分享收藏
查看更多内容