.png){kind=icon}
返回
Fully 2D Materials-Based Resistive Switching Circuits for Advanced Data Encryption
.png){kind=icon}
PRE
AI
DOI：10.1002/adfm.202403029.png)
.png){kind=icon}
原文求助.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
Data encryption is an essential building block in modern electronic systems to prevent spying and hacking. Every day more and more objects produce electronic data, and this needs to be encrypted before being transmitted. Hence, designing devices, circuits, and systems for data encryption that can be integrated in all kinds of objects and that consume low amounts of energy is highly necessary. Here, this work reports the fabrication of flexible and transparent electronic circuits consisting of devices that exhibit threshold-type resistive switching with a high degree of stochasticity. The cycle-to-cycle variability of switching voltages and state currents is significant but confined within a well-defined range, which is consistent across multiple devices. This allows to design an efficient protocol for true random number generation. The circuits are fabricated with only synthetic 2D materials, can be fabricated in a scalable manner, and can be integrated in any object. Flexible and transparent fully 2D materials based memristors exhibit reliable threshold resistive switching behavior with a high degree of stochasticity. A true random number generator circuit for advanced data encryption can be developed using the Graphene/hexagonal boron nitride/Graphene devices with high cycle-to-cycle variability of switching voltages and state currents as entropy source. image
Keyword:
2D materials
crossbar
hexagonal boron nitride
memristor
true random number generator
期刊
IF:
19
论文数:
3.5W
被引数:
32.1W
机构
引用论文
Memristors with Initial Low-Resistive State for Efficient Neuromorphic Systems具有初始低电阻状态的高效神经形态系统的忆阻器
PREAI
分享收藏Robust memristors based on layered two-dimensional materials基于层状二维材料的鲁棒忆阻器.png)
NATURE ELECTRONICS
OAAI
NATURE ELECTRONICSIF40.9
OAAI分享收藏Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks用于人工神经网络的高密度忆阻交叉阵列中二维材料的晶圆级集成NATURE ELECTRONICS
NATURE ELECTRONICSIF40.9
PREAI
分享收藏
查看更多内容