返回
摘要
En 中文
This brief describes MOS amplifiers comprising a gated diode and a field-effect transistor. A gated diode is a two-terminal MOS device in which charge is stored when a voltage above the threshold voltage is applied between the gate and the source, and negligible. charge is stored otherwise. The operation makes use of the nonlinear capacitance of the gated diode for voltage boosting, where voltage for 1-data is boosted high and voltage for 0-data stays low, achieving significant voltage gain, signal margin, and current drive. Further, a number of small-signal single-ended sense amplifier circuits are presented. The gated-diode sense amplifiers deliver high gain, require low power and low device count, and are tolerant to voltage and process variation.
Keyword:
gated diode
MOS amplifiers
nonlinear capacitor
nonlinear circuits
single-ended sense amplifiers
AI总结
对已上传原文的论文进行重点信息的提取,主要内容包括:简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
I
IF:
4.9
论文数:
8.8K
被引数:
2.5W
机构
暂无机构信息
引用论文
暂无论文信息

