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Giant-grain silicon (GGS) and its application to stable thin-film transistor
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DOI：10.1016/j.displa.2005.04.001.png)
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Abstract
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We developed a giant-grain silicon (GGS) by Ni-mediated crystallization of amorphous silicon (a-Si) with a silicon-nitride (SiNx) cap layer. Ni particles were sputtered onto the SiNx/a-Si layer and then it was annealed at around 600 degrees C. The Ni diffuses through a SiNx cap and then forms NiSi2 crystallites in alpha-Si, which is able to induce crystallization. The grain size can be controlled from a few to 100 mu m. The grain size can be increased with increasing the cap layer thickness or by decreasing the Ni density on the SiNx. The p-channel GGS poly-Si TFr exhibited a field-effect mobility of 101 cm(2)/Vs and a threshold voltage of -3.6 V and is very stable under gate or hot carrier bias-stress. These superior performances may be due to the smooth surface of GGS poly-Si and solid-phase crystallization of a-Si. (c) 2005 Elsevier B.V. All rights reserved.
Keywords:
crystallization
growth mechanism
amorphous silicon
thin-film transistor
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