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Hexagonal Silicon Realized

delete2015-08-07
delete148
PRE
AI
H
Håkon Ikaros T. Hauge
M
Marcel A. Verheijen
C
Conesa-Boj, Sonia
T
Tanja Etzelstorfer
M
Marc Watzinger
D
Dominik Kriegner
I
Ilaria Zardo
C
Claudia Fasolato
F
Francesco Capitani
P
P. Postorino
S
Sebastian Kölling
李
李昂 (Ang Li)
S
Simone Assali
J
J. Stangl
E
Erik P. A. M. Bakkers *
DOI:10.1021/acs.nanolett.5b01939delete
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摘要

摘要

En 中文
Silicon, arguably the most important technological semiconductor, is predicted to exhibit a range of new and interesting properties when grown in the hexagonal crystal structure. To obtain pure hexagonal silicon is a great challenge because it naturally crystallizes in the cubic structure. Here, we demonstrate the fabrication of pure and stable hexagonal silicon evidenced by structural characterization. In our approach, we transfer the hexagonal crystal structure from a template hexagonal gallium phosphide nanowire to an epitaxially grown silicon shell, such that hexagonal silicon is formed. The typical ABABAB... stacking of the hexagonal structure is shown by aberration-corrected imaging in transmission electron microscopy. In addition, X-ray diffraction measurements show the high crystalline purity of the material. We show that this material is stable up to 9 GPa pressure. With this development, we open the way for exploring its optical, electrical, superconducting, and mechanical properties.
Keyword:
Silicon
Hexagonal Crystal Structure
Core/Shell Nanowire
Single-Crystalline
X-ray Diffraction
Raman Spectroscopy
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期刊

Nano Letters 封面图
Nano Letters
IF:
9.1
论文数:
2.7W
被引数:
16.5W

机构

J
Johannes Kepler University Linz
学者数:
5.5K
论文数: 4.6K
被引数: 106
D
Delft University of Technology
学者数:
2.6W
论文数: 2.5W
被引数: 3.8W
C
consiglio nazionale delle ricerche (cnr)
学者数:
6.2W
论文数: 5.7W
被引数: 48
E
Eindhoven University of Technology
学者数:
1.6W
论文数: 1.5W
被引数: 2.2W
S
sapienza university rome
学者数:
6.3W
论文数: 4.7W
被引数: 381
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