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High Bandwidth Capacitance Efficient Silicon MOS Modulator

delete2021-01-01
delete20
PRE
AI
W
Weiwei Zhang
K
Kapil Debnath
B
Bigeng Chen
K
Ke Li
S
Shenghao Liu
M
Martin Ebert
J
Jamie D. Reynolds
A
Ali Z. Khokhar
C
Callum G. Littlejohns
J
James Byers
M
Muhammad K. Husain
F
Frédéric Y. Gardes
S
Shinichi Saito
D
David J. Thomson *
DOI:10.1109/JLT.2020.3026945delete
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摘要

摘要

En 中文
This article analysed and optimised horizontal Silicon insulator Silicon capacitor (H-SISCAP) phase shifter structures with insulator thickness t(ox) up to 40 nm. The phase shifter has an effective capacitance (C-eff) around 0.5 fF/mu m and a phase change efficiency 1.8 V center dot cm, of which the balance between capacitance and phase efficiency is comparable with silicon rib waveguide based depletion type phase shifters. Silicon Mach-Zehnder interferometer (MZI) modulators with 200 mu m long H-SISCAP phase shifters optimised for TM polarised light have been fabricated and demonstrated with a 3 dB EO bandwidth above 35 GHz and intrinsic H-SISCAP RC bandwidth around 150 GHz. The modulator displays open eye-diagrams for data rates up to 60 Gbit/s without detection equalization and 72 Gbit/s with 2 taps equalization in NRZ-OOK operation. The demonstrated H-SISCAP phase shifter paves the way to build high bandwidth segmented, travelling wave and compact ring resonators modulators for applications of optical transmitters, microwave generations, and LIDAR applications, etc.
Keyword:
Optical waveguides
Phase shifters
Capacitance
Phase modulation
Silicon
Bandwidth
Electrooptic modulators
MOS
Silicon photonics
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期刊

Journal of Lightwave Technology 封面图
Journal of Lightwave Technology
IF:
4.8
论文数:
1.7W
被引数:
3.8W

机构

U
university of southampton
学者数:
3.3W
论文数: 3.2W
被引数: 52
I
indian institute of technology (iit) - kharagpur
学者数:
6.2K
论文数: 6.5K
被引数: 6
引用论文

引用论文

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