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High Bandwidth Capacitance Efficient Silicon MOS Modulator
DOI:10.1109/JLT.2020.3026945.png)
摘要
En 中文
This article analysed and optimised horizontal Silicon insulator Silicon capacitor (H-SISCAP) phase shifter structures with insulator thickness t(ox) up to 40 nm. The phase shifter has an effective capacitance (C-eff) around 0.5 fF/mu m and a phase change efficiency 1.8 V center dot cm, of which the balance between capacitance and phase efficiency is comparable with silicon rib waveguide based depletion type phase shifters. Silicon Mach-Zehnder interferometer (MZI) modulators with 200 mu m long H-SISCAP phase shifters optimised for TM polarised light have been fabricated and demonstrated with a 3 dB EO bandwidth above 35 GHz and intrinsic H-SISCAP RC bandwidth around 150 GHz. The modulator displays open eye-diagrams for data rates up to 60 Gbit/s without detection equalization and 72 Gbit/s with 2 taps equalization in NRZ-OOK operation. The demonstrated H-SISCAP phase shifter paves the way to build high bandwidth segmented, travelling wave and compact ring resonators modulators for applications of optical transmitters, microwave generations, and LIDAR applications, etc.
Keyword:
Optical waveguides
Phase shifters
Capacitance
Phase modulation
Silicon
Bandwidth
Electrooptic modulators
MOS
Silicon photonics
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期刊
IF:
4.8
论文数:
1.7W
被引数:
3.8W
机构
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