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High-Efficiency Solar Cells forced to SnS Back Contact with Power Conversion Efficiency of up to 31%

delete2026-04-30
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PRE
AI
D
Douha Boulakar *
A
Abdelkhalek El Rharib
Y
Youssef Lazrag
Y
Yamina Mir
A
Abdelaziz Amine *
R
Rania Anoua
A
Abdelkader Mouadili *
M
M. Zazoui
DOI：10.1016/j.mtphys.2026.102117delete
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Abstract

Abstract

En 中文
• Comparative study of SnS, a-Si and alternative back contacts for CZTS solar cells. • The DFT result shows that the band-alignment at the SnS/CZTS interface is favorable. • SCAPS-1D simulations demonstrate enhanced hole extraction and reduced recombination with SnS. • Optimized Ni/SnS/CZTS/CdS/i-ZnO/AZO structure achieves 31% efficiency, 87% FF and 1.15 V Voc. • Impedance spectroscopy reveals a reduction of recombination losses at the interface.
Keywords:
SnS
CZTS solar cells
band alignment
hole extraction
recombination losses

Journal

Materials Today Physics cover
Materials Today Physics
IF:
9.7
Papers:
2.0K
Citations:
1.2W

Organization

U
University of Hassan II
Scholars:
10
Papers: 5
Citations: 0
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