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High frequency RFCMOS substrate noise sensor
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DOI：10.1016/j.aeue.2021.154046.png)
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A substrate crosstalk sensor featuring high performance gain over a wide frequency range is proposed. The topology is used as high frequency crosstalk noise sensor in modern mobile communication SoC applications. The design is based on a differential amplifier input stage combined with CMOS inverters as analog amplifiers in a Cherry-Hooper topology. The sensor performance is demonstrated via simulation results in an RFCMOS 65 nm process with a gain of 5.7 dB in a frequency range from 24 MHz up to 15 GHz, and -1 dB compression point of 107 mV, appearing as the most advanced and high performance noise sensor in the literature.
Keyword:
Substrate noise
RFCMOS
High frequency
Crosstalk
Mobile communications
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