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High pump depletion second-harmonic generation using domain engineered thin-film lithium niobate waveguides
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DOI：10.1515/nanoph-2025-0505.png)
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Abstract
En 中文
Thin-film lithium niobate (TFLN) has emerged as a powerful platform for integrated nonlinear optics owing to its large chi(2) nonlinearity, tight confinement and flexible tunability. To fully excavate such superior nonlinear optical properties, domain engineering is commonly adopted to fulfill the phase matching condition of chi(2) processes. During the past decade, various domain engineered TFLN nonlinear optical devices have been demonstrated, showing extremely high length-normalized nonlinear optical conversion efficiencies. However, application-driven scenarios demand absolute energy conversion in nonlinear frequency conversion rather than length-normalized efficiencies, but the progress has been limited by imperfect fabrication processes. In this work, we realize effective on-chip nonlinear energy conversion by developing low-loss and high-quality domain engineered TFLN waveguides with long interaction length. Ion beam trimming (IBT) technique and an etching-prior-poling workflow are adopted for such fabrication. Optical characterization yields an overall second-harmonic generation (SHG) efficiency of 2,590 %/W. A high pump depletion of 85.7 % is demonstrated under continuous-wave operation, which directly reflects strong nonlinear energy conversion. These results may lead to breakthroughs in applications like classical optical frequency conversion, quantum frequency conversion, and quantum light generation.
Keywords:
TFLN
quasi-phase matching (QPM)
frequency conversion
pump depletion
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