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High-speed optoelectronic devices
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DOI：10.1007/s11432-022-3669-5.png)
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High-speed optoelectronic devices are key components of modern fiber communication systems, and the backbone of information technology. In this paper, we present our work on high-speed devices over the past decades, including high-performance semiconductor lasers and integrated light sources, wideband electro-optic modulators, high saturation power photodetectors, and their applications in both fiber communications and microwave photonics. Gain-coupled distributed feedback (DFB) lasers were fabricated with high single-mode yield. Electroabsorption modulated lasers (EMLs) were demonstrated based on identical epitaxial layer integration scheme, including single channel 40 Gb/s EMLs, and 4 x 25 and 4 x 56 Gb/s EML arrays. Both InP and thin-film lithium niobate based low half-wave voltage electro-optic modulators with modulation bandwidth over 40 GHz were demonstrated. Back-illuminated modified uni-traveling-carrier photodetectors (MUTC-PDs) with high saturation power and bandwidth exceeding 100 GHz were developed. Applications of high-speed optoelectronic devices in fiber-optic links and sub-THz wave generation are presented.
Keyword:
optoelectronic devices
semiconductor lasers
optical modulators
photodetectors
integrated photonic circuits
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7.6
论文数:
4.9K
被引数:
8.9K
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