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High-temperature ceramic pressure sensor
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DOI：10.1016/S0924-4247(96)01438-0.png)
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摘要
En 中文
A pressure microsensor for working at high temperature has been developed. The device consists of a tantalum nitride thin film, patterned on a Wheatstone bridge configuration, sputter-deposited onto thermally oxidized silicon wafers with an aluminium interconnection layer and a silicon dioxide passivation. The microsensors present a low temperature coefficient of resistance and goad long-term stability, The sensitivity is 0.15 mV (V bar)(-1) with low sensitivity drift and low combined non-linearity and hysteresis in the pressure range 0-10 bar.
Keyword:
ceramics
high temperature
piezoresistive pressure sensors
tantalum nitride
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