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High-Temperature SiC Power Module Electrical Evaluation Procedure
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DOI：10.1109/TPEL.2011.2151879.png)
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摘要
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To take full advantage of silicon carbide semiconductor devices, high-temperature device packaging needs to be developed. This paper describes potential defects from design and fabrication procedures, and presents a systematic electrical evaluation process to detect such defects. This systematic testing procedure can rapidly detect many defects and reduce the risk in high-temperature packaging testing. A multichip module development procedure that uses this testing procedure is also presented and demonstrated with an example.
Keyword:
High-temperature techniques
packaging
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IF:
6.5
论文数:
1.7W
被引数:
8.3W
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