Highly sensitive Hall sensor in CMOS technology

Blanchard, H

doi:10.1016/S0924-4247(99)00329-5

2000-05-01

PRE

DOI：10.1016/S0924-4247(99)00329-5

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We present a highly sensitive Hall device fabricated in a standard CMOS technology and combined with integrated flux concentrators acting as magnetic amplifiers. The active area of the Hall plate is in a buried n-well with a shape optimized by removing the parts less sensitive to the magnetic field. The effect of the shape of the concentrators is studied. This results in the design of elliptical shape integrated concentrators for the optimization of the sensitivity, and of the measurement range, as well as for the decrease of the overall chip size. The CMOS sensor combined with the optimized concentrators has a sensitivity of 2.1 V/T with a 4 V bias, the lowest detectable field is 0.2 mu T in a frequency range of 10(-3)-10 Hz and the linearity is better than 1% in a +/- 16 mT measurement range. (C) 2000 Elsevier Science S.A. All rights reserved.

Keyword:

Hall sensor

CMOS compatible

ferromagnetic flux concentrators

high sensitivity

low noise