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Highly sensitivity Non-Uniform Tunnel FET based biosensor using source engineering

delete2023-07-01
delete8
PRE
AI
J
Jagritee Talukdar *
G
Gopal Rawat
K
Kavicharan Mummaneni
DOI:10.1016/j.mseb.2023.116455delete
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摘要

摘要

En 中文
The manuscript proposes a novel dielectrically modulated Non-Uniform Tunnel FET based Biosensor for the detection of charged and neutral biomolecules. In this work, the reliability analysis of Dual Material Source based Non-Uniform Tunnel FET Biosensor has been performed. The design of Non-Uniform Tunnel FET and doping profile at the tunneling junction is accountable for the improved sensitivity. The response of the proposed biosensor has been analysed in terms of threshold voltage sensitivity, ON-OFF current ratio sensitivity and drain current sensitivity by using Sentaurus TCAD device simulator. The investigation includes analysis of neutral, positive and negatively charged Bio-analytes at immobilization layer for different cases of dielectrics. In case of positively charged Bio-analytes, it has been observed that the proposed biosensor can obtain the highest sensitivities of 100 mV, 7.9 x 106, 451 for threshold voltage, ON-OFF current ratio, and drain current sensitivities, respectively. Furthermore, the performance and reliability assessment of the biosensor have been considered using the appearance of steric hindrance in different patterns and temperature fluctuations in the wide range from 200 K to 400 K.
Keyword:
Biosensor
Sensitivity
Bio-analytes
Temperature
Dielectric-Modulation
Nanogap cavity

期刊

M
Materials Science and Engineering B-Advanced Functional Solid-State Materials
IF:
4.6
论文数:
6.6K
被引数:
2.0W

机构

N
national institute of technology (nit system)
学者数:
4.0W
论文数: 3.7W
被引数: 31
N
National Institute of Technology Silchar
学者数:
957
论文数: 952
被引数: 1.9K