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Hot electron injection driven phase transitions
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DOI：10.1103/PhysRevB.86.134101.png)
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We report on a general mechanism for photo-induced phase transitions. The process relies on the photo-injection of hot electrons from an adjacent metallic layer to trigger the structural dynamics of the materials of interest. This mechanism is demonstrated for the semiconductor-to-metal phase transition of VO2 using a 20 nm Au injection layer. The nature of the phase transition is demonstrated by time-resolved optical transmission measurements, as well as a well defined bias dependence that illustrates that the Au film is the source of nonequilibrium electrons driving the phase transition.
Keyword:
INSULATOR-TRANSITION
MOTT TRANSITION
ATOMIC MOTIONS
DYNAMICS
EXCITATION
期刊
IF:
3.7
论文数:
15.4W
被引数:
41.0W
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Neuroscience
OAAI
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