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Improved performance light-emitting diodes quantum dot layer

delete2007-09-25
delete147
PRE
AI
N
Niu, Yu-Hua
A
Andrea M. Munro
Y
Yen‐Ju Cheng
Y
Yanqing Tian
M
M. S. Liu
J
J. L. Zhao
J
Julie A. Bardecker
J
Jen-La Plante, Ilan
D
David S. Ginger *
A
Alex K.‐Y. Jen
DOI:10.1002/adma.200602373delete
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摘要

摘要

En 中文
Quantum dot light-emitting diodes with high external quantum efficiency and luminous power efficiency are realized through in situ thermal annealing of a quasi-monolayer of colloidal nanocrystals on a crosslinked hole-transport layer. Partial desorption of quantum-dot surface ligands and improved film morphology contribute to better electrical injection from the organic layers to the quantum dots, resulting in a 3 to 4 fold enhancement of device efficiency with emission exclusively from the quantum dots.
Keyword:
HOLE-TRANSPORT LAYER
CDSE NANOCRYSTALS
SEMICONDUCTING POLYMER
SOLAR-CELLS
ELECTROLUMINESCENCE
FILMS
PHOTODETECTORS
COMPOSITES
TRANSITION
MONOLAYERS
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期刊

Advanced Materials 封面图
Advanced Materials
IF:
26.8
论文数:
3.4W
被引数:
46.0W

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