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Improving interface-mediated carrier transport for efficient perovskite/Cu(In,Ga)Se2 tandem solar cells
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DOI：10.1038/s41560-026-02125-3.png)
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Abstract
En 中文
Monolithic perovskite/Cu(In,Ga)Se2 tandem solar cells can surpass the efficiency limits of single-junction photovoltaics but are currently limited by interfacial optical and electronic losses. Here we demonstrate a dual-interface carrier transport engineering strategy that combines a nanoparticle-assisted NiOX intermediate recombination layer with bimolecular co-passivation at the perovskite/C60 interface, enabling conformal coverage on textured Cu(In,Ga)Se2 surfaces, suppressed defects, optimized band alignment and enhanced carrier extraction across both interfaces. Champion monolithic tandem cells achieve power conversion efficiencies of 31.09% (certified 30.57%, steady-state 30.32%) for small-area devices (0.0539 cm2) and 29.44% (certified 28.85%) for larger-area devices (1.0298 cm2). The optimized devices retain ~94% of their initial efficiency after >3,500 h of storage, ~91% after >750 h of continuous operation, and ~90% after 960 h of heating at 70 °C, demonstrating simultaneously enhanced efficiency and stability. The performance of perovskite/Cu(In,Ga)Se2 tandem solar cells is limited by optical and electronic losses at the interfaces between layers. By engineering two of these interfaces, Zeng, Wang, Tang et al. achieve a certified efficiency of 30.57% and improved device stability.
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60.1
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981
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5.6W
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