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Improving the efficiency of silicon solar cells using in situ fabricated perovskite quantum dots as luminescence downshifting materials
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DOI：10.1515/nanoph-2019-0320.png)
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Abstract
En 中文
Luminescence downshifting (LDS) layer integration has been proven to be an efficient way to ameliorate the poor UV-blue spectral response and improve the power conversion efficiency (PCE) for solar cells (SCs). By employing an in situ fabricated CH3NH3PbBr3 (CH3NH3 = methylammonium, MAPbBr(3)) quantum dot/polyacrylonitrile (PAN) composite film as the LDS layer, we observed a clear enhancement in the external quantum efficiency (EQE) for silicon SCs, predominantly in the UV-blue region. With a theoretically calculated intrinsic LDS efficiency (eta(LDS)) of up to 72%, silicon SCs with the LDS layer exhibited an absolute value of 1% for PCE improvement in comparison to those without the LDS layer. The combination of easy fabrication and low cost makes it a practical way to achieve photovoltaic enhancement of Si-based SCs.
Keywords:
perovskite
quantum dots
composite films
luminescence downshifting
silicon solar cells
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