.png){kind=icon}
返回
Improving Write Performance Through Reliable Asynchronous Operation in Physically-Addressable SSD
.png){kind=icon}
OA
AI
DOI：10.1109/ACCESS.2020.3033886.png)
.png){kind=icon}
.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
Physically-addressable solid-state drives (PASSDs) are secondary storage devices that provide a physical address-based interface for a host system to directly control NAND flash memory. PASSDs overcome the shortcomings such as latency variability, resource under-utilization, and log-on-log that are associated with legacy SSDs. However, in some operating environments, the write response time significantly increases because the PASSD reports the completion of a host write command synchronously (i.e., write-through) owing to reliability problems. It contrasts asynchronous processing (i.e., write-back), which reports a completion immediately after data are received in a high-performance volatile memory subsequently used as a write buffer to conceal the operation time of NAND flash memory. Herein, we propose a new scheme that guarantees write reliability to enable a reliable asynchronous write operation in PASSD. It is designed to use a large-granularity mapping table for minimizing the memory requirements and performing internal operations at an idle time to avoid response delays. Results demonstrate that the proposed PASSD reduces the average write response time by up to 88% and guarantees reliability without performance degradation.
Keyword:
Reliability
Memory management
Time factors
Degradation
Writing
Flash memories
Delays
Flash translation layer
NAND flash memory
open-channel SSD
physically-addressable SSD
solid-state drive
AI总结
对已上传原文的论文进行重点信息的提取，主要内容包括：简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
IF:
3.6
论文数:
9.8W
被引数:
29.4W
机构
引用论文
Chiral overcrowded alkenes; Asymmetric synthesis of (3S,3?S)-(M,M)-(E)-(+)-1,1?,2,2?,3,3?,4,4?-octahydro-3,3?,7,7?-tetramethyl-4,4?-biphenanthrylidenes.png)
Chirality
ChiralityIF0
PREAI
分享收藏分享收藏Error Characterization, Mitigation, and Recovery in Flash-Memory-Based Solid-State DrivesPROCEEDINGS OF THE IEEE
OAAI
PROCEEDINGS OF THE IEEEIF25.9
OAAI分享收藏
查看更多内容