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Integrated phased array systems in silicon
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DOI：10.1109/JPROC.2005.852231.png)
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摘要
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Silicon offers a new set of possibilities and challenges for RF microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-mu m silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-mu m CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications.
Keyword:
beam forming
CMOS
frequency generation
low-noise amplifiers (LNAs)
phase shifting
phased arrays
power amplifier
radar
receivers
SiGe
silicon
transmitters
wireless communications
期刊
IF:
25.9
论文数:
9.9K
被引数:
4.5W
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分享收藏Smart phased Array SoCs: A novel application for advanced SiGe HBT BiCMOS technology.png)
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