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Interface-induced magnetic anisotropy inflected by CoN in AlN/Co/AlN heterostructure thinfilm
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DOI：10.1016/j.mtadv.2026.100740.png)
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Abstract
En 中文
• Annealing-controlled nitrogen diffusion in AlN/Co/AlN heterostructures enables functional magnetic property engineering. • Ultrathin Co (3 nm) recovers metallic ferromagnetism via nitrogen desorption, while thick Co (12 nm) forms interfacial nitrides suppressing magnetization. • Interfacial Co–N bonding induces exceptional coercivity (3400 Oe), creating opportunities for thermally tunable devices, semi-permanent magnets, and reconfigurable spintronic components with designer anisotropy.
Keywords:
Interface-induced magnetic anisotropy
In-plane & out-of-plane magnetization
Polarization-dependent XAFS
MOKE
Local disorder
AlN/Co/AlN heterostructure
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