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Interlayer coupling in Co/Si sandwich structures
DOI:10.1103/PhysRevB.62.16018.png)
摘要
En 中文
The combinations of magnetic materials with traditional semiconductors are interesting possibilities for new magnetoresistive structures. In this work the interlayer magnetic coupling in Co-Si systems has been studied. The coupling has been calculated within the density-functional theory, and it has been observed to oscillate with a spatial period of two Si layers. The electronic structure analysis indicates the formation of quantum wells within the Si spacer.
Keyword:
ELECTRONIC-STRUCTURE
FE/SI MULTILAYERS
METAL SILICIDES
MAGNETORESISTANCE
SUPERLATTICES
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期刊
IF:
3.7
论文数:
15.4W
被引数:
41.0W
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PHYSICAL REVIEW B
IF3.7

