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Interpretable Surrogate Learning for Electronic Material Generation

delete2024-11-01
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PRE
AI
Z
Zhilong Wang
S
Sixian Liu
K
Kehao Tao
A
An Chen
H
Hongxiao Duan
韩
韩彦强 (Yanqiang Han)
F
Fengqi You *
刘钢 封面图
刘钢 (Gang Liu)
李
李金金 (Jinjin Li) *
DOI:10.1021/acsnano.4c12166delete
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摘要

摘要

En 中文
Despite many accessible AI models that have been developed, it is an open challenge to fully exploit interpretable insights to enable effective materials design and develop materials with desired properties for target applications. Here, we introduce an interpretable surrogate learning framework that can actively design and generate electronic materials (EMGen), akin to producing updated materials with requirements by screening all possible elements and fractions. Taking the materials system with required band gaps as a case study, EMGen exhibits a benchmarking predictive error and a running time of 1.7 min for designing and producing a structure with a desired band gap. Using EMGen, we establish a large hybrid functional band gap database, and more uplifting is that the proposed EMGen effectively designs Ga x O y with a wide band gap (>5.0 eV) for deep ultraviolet (DUV) optoelectronic devices, enabling a breakthrough extension of the applicability of Ga x O y films in photodetectors to DUV light below 240 nm. The augmented band gap also helps improve the breakdown voltage and the heat resilience performance of the amorphous Ga x O y film, thereby achieving considerable potential within the realm of power electronics applications. The proposed EMGen, as a specialized, interpretable AI model for the generation of electronic materials, is demonstrated to be an essential tool for on-demand semiconductor materials design.
Keyword:
machine learning
electronicmaterials
bandgap
active learning
ensemble learning
first-principles calculations

期刊

ACS Nano 封面图
ACS Nano
IF:
16
论文数:
2.7W
被引数:
25.6W

机构

S
shanghai jiao tong university
学者数:
15.7W
论文数: 11.7W
被引数: 159
C
Cornell University
学者数:
6.3W
论文数: 5.4W
被引数: 10.9W
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