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Large Anomalous Nernst Effect in Disordered CoPt Thin Films for Planar Thermoelectric Sensing
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DOI：10.1002/aelm.202500880.png)
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Abstract
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The anomalous Nernst effect (ANE), which converts a thermal gradient into a transverse electric field, offers a promising route for planar thermoelectric devices and microscale heat-flux sensors. In this study, we systematically investigated the compositional dependence of ANE and thermal transport in Co1−xPtx thin films deposited on quartz glass substrates using DC magnetron co-sputtering. A strong compositional dependence of the transverse thermopower (SANE) was observed, showing a significant tenfold enhancement from 0.33 µV K−1 to 3.22 µV K−1. The corresponding transverse thermoelectric constant (αxy) reached 5 A m−1 K−1, closely following an intrinsic-like scaling behavior with anomalous Hall conductivity (σxy). By tuning the Pt concentration, we achieved a notable ratio in the |αxy|/|σxy| close to the well-known kB/e benchmark observed in topological magnets. The ANE sensitivity (E/JQ) exhibited a maximum of 0.3 µm A−1 at x = 50%, accompanied by a reduced thermal conductivity of ≈10 W m−1 K−1. Our results demonstrate that disordered CoPt films can simultaneously achieve low κ and large intrinsic ANE response, highlighting that disordered or partially crystalline structures can sustain strong transverse thermoelectric transport and are promising candidates for high-sensitivity thermoelectric and heat-flux sensing applications.
Keywords:
anomalous Nernst effect (ANE)
ANE sensitivity (E/JQ)
heat flux sensors based on ANE
short-range order CoPt alloys
transverse thermopower
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