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Large Transverse Piezoelectricity in Highly (001)-Oriented PZT Thick Films on Titanium Substrates
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DOI：10.3390/ma19112396.png)
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Abstract
En 中文
Integration of lead zirconate titanate (PZT) films on metallic substrates is important for flexible piezoelectric devices, but achieving highly textured crystallinity without detrimental interfacial diffusion or oxidation remains challenging. In this work, PZT thick films (~1.3 μm) were deposited on titanium substrates using radio-frequency magnetron sputtering at 400 °C followed by rapid thermal processing at 640 °C for 2.5 min. A conductive LaNiO3 buffer layer was introduced to promote the nucleation of the perovskite phase and suppress interfacial degradation. The resulting PZT films on the LNO/Pt/Ti substrates exhibit a strong (001) preferred orientation and a dense microstructure. The films show a large remnant polarization Pr of ~61 μC cm−2 and a low coercive field Ec of ~56 kV cm−1 at 60 V, together with a dielectric constant εr of ~1350–1612 and a dielectric loss tanδ ≤ 0.06 in the frequency range of 1 kHz to 1 MHz. Patterned Pt/PZT/LNO/Pt/Ti cantilevers yield a transverse piezoelectric coefficient e31,f of ~−6.7 C/m2, significantly outperforming reported piezoelectric films deposited on Ti. These results demonstrate that controlled nucleation and rapid thermal crystallization enable highly textured PZT films on reactive metallic substrates, providing a viable route for flexible piezoelectric MEMS devices.
Keywords:
PZT film
titanium
(001) orientation
transverse piezoelectric coefficient/<i>e</i><sub>31,<i>f</i></sub>
RF magnetron sputtering
rapid thermal processing (RTP)
piezo-MEMS
Journal
IF:
3.2
Papers:
5.6W
Citations:
15.1W
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