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Lasing in planar semiconductor diodes

delete2011-12-30
delete3
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OA
AI
G
Giorgio De Simoni *
L
Lukas Mahler
V
Vincenzo Piazza
A
Alessandro Tredicucci
C
C. A. Nicoll
H
Harvey E. Beere
D
David Ritchie
F
Fabio Beltram
DOI：10.1063/1.3672438delete
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摘要

摘要

En 中文
We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit similar to 1 GHz -3 dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3672438]
Keyword:
P-N-JUNCTION
LASER
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期刊

Applied Physics Letters 封面图
Applied Physics Letters
IF:
3.6
论文数:
10.4W
被引数:
17.8W

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