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Manipulating 2D Materials through Strain Engineering

delete2024-05-31
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PRE
AI
X
Xiangxiang Yu
Z
Zhuiri Peng
L
Langlang Xu
W
Wenhao Shi
Z
Zheng Li
X
Xiaohan Meng
肖
肖河 (Xiao He)
Z
Zhen Wang
S
Shikun Duan
L
Lei Tong
X
Xinyu Huang
X
Xiangshui Miao
胡伟达 封面图
胡伟达 (Weida Hu) *
叶
叶磊 (Lei Ye) *
DOI:10.1002/smll.202402561delete
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摘要

摘要

En 中文
This review explores the growing interest in 2D layered materials, such as graphene, h-BN, transition metal dichalcogenides (TMDs), and black phosphorus (BP), with a specific focus on recent advances in strain engineering. Both experimental and theoretical results are delved into, highlighting the potential of strain to modulate physical properties, thereby enhancing device performance. Various strain engineering methods are summarized, and the impact of strain on the electrical, optical, magnetic, thermal, and valleytronic properties of 2D materials is thoroughly examined. Finally, the review concludes by addressing potential applications and challenges in utilizing strain engineering for functional devices, offering valuable insights for further research and applications in optoelectronics, thermionics, and spintronics. This paper encapsulates the review's focus on recent advances in strain engineering of 2D layered materials like graphene, h-BN, TMDs, and BP. It outlines the methods, effects on properties, and potential applications in devices, providing a roadmap for further research. image
Keyword:
2D materials
device performance
experimental and theoretical results
strain engineering

期刊

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IF:
12.1
论文数:
3.0W
被引数:
16.4W

机构

S
shanghai institute of technical physics, cas
学者数:
1.0K
论文数: 714
被引数: 2
C
chinese academy of sciences
学者数:
56.7W
论文数: 45.0W
被引数: 704
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