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Maximized atomic disordering approach boost the thermoelectric performance of Mg2Sn through the self-compensation effect and steric effect
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PRE
AI
Y
E
Z
姜
隋
张
W
DOI：10.1016/j.actamat.2021.117172.png)
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Abstract
En 中文
Atomic disordering was an effective strategy to reduce lattice thermal conductivity. In this work, the atomic disordering of Mg2-delta Sn1-xBix was maximized by both the charge self-compensation and steric effects. Due to the strong phonon scattering arose from substitutional defects Bis n and self-compensational vacancies V-Mg, an exclusively low lattice thermal conductivity of 1.38 W m(-1) K-1 was observed in the Mg2-delta Sn0.8Bi0.2 sample, corresponding to only 30% of Mg2Sn, while a 30% less than that of its counterpart Mg2-delta Sn0.8Bi0.2 (1.97 W m(-1) K-1). The EPMA result presents that the Mg2-delta Sn0.8Bi0.2 has a higher concentration of V-Mg than that of Mg2-delta Sn0.8Bi0.2, suggesting an apparent steric effect for the formation of V-Mg. Furthermore, the Mg vacancy and its induced lattice shrinkage also result in band convergence. Consequently, a high ZT of 1.14 was obtained at 500 degrees C in the Mg2-delta Sn0.8Bi0.2 sample, which is 52% higher than the conventionally doped Mg2Sn0.99Bi0.01, while comparable with the Mg2-delta Sn0.8Bi0.2. This work provides new insight into tuning thermoelectric transport properties through the atomic disorder strategy. (C) 2021 Published by Elsevier Ltd on behalf of Acta Materialia Inc.
Keywords:
Thermoelectric
Mg2-delta Sn1-xBix
Self-compensation vacancy
Steric effect
Journal
IF:
9.3
Papers:
2.0W
Citations:
12.9W