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Mechanically Gated Transistor
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DOI：10.1002/adma.202305766.png)
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Silicon-based field effect transistors have underpinned the information revolution in the last 60 years, and there is a strong desire for new materials, devices, and architectures that can help sustain the computing power in the age of big data and artificial intelligence. Inspired by the Piezo channels, a mechanically gated transistor abandoning electric gating altogether, achieving an ON/OFF ratio over three orders of magnitude under a mechanical force of hundreds of nN is developed. The two-terminal device utilizes flexoelectric polarization induced by strain gradient, which modulates the carrier concentration in a Van der Waals structure significantly, and it mimics Piezo channels for artificial tactile perception. This simple device concept can be easily adapted to a wide range of semiconducting materials, helping promote the fusion between mechanics and electronics in a similar way as mechanobiology.
Keyword:
flexoelectricity
Piezo channels
transistors
Van der Waals structures
期刊
IF:
26.8
论文数:
3.5W
被引数:
46.0W
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Flexible electronic synapse enabled by ferroelectric field effect transistor for robust neuromorphic computing铁电场效应晶体管支持的灵活电子突触，用于稳健的神经形态计算
PREAI
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