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Memory cell based on a φ Josephson junction

delete2013-06-20
delete74
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OA
AI
G
Goldobin, E. *
S
Sickinger, H.
W
Weides, M.
R
Ruppelt, N.
K
Kohlstedt, H.
K
Kleiner, R.
K
Koelle, D.
DOI:10.1063/1.4811752delete
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摘要

摘要

En 中文
The phi Josephson junction has a doubly degenerate ground state with the Josephson phases +/-phi. We demonstrate the use of such a phi Josephson junction as a memory cell (classical bit), where writing is done by applying a magnetic field and reading by applying a bias current. In the store state, the junction does not require any bias or magnetic field, but just needs to stay cooled for permanent storage of the logical bit. Straightforward integration with rapid single flux quantum logic is possible. (C) 2013 AIP Publishing LLC.

期刊

Applied Physics Letters 封面图
Applied Physics Letters
IF:
3.6
论文数:
10.4W
被引数:
17.8W

机构

E
eberhard karls university of tubingen
学者数:
3.3W
论文数: 2.5W
被引数: 38
H
Helmholtz Association
学者数:
13.2W
论文数: 10.7W
被引数: 145
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