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Memristive Model for Synaptic Circuits
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DOI：10.1109/TCSII.2016.2605069.png)
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As a promising alternative for next-generation memory, memristors provide several useful features such as high density, nonvolatility, low power, and good scalability as compared with conventional CMOS-based memories. In this brief, a voltage-controlled threshold memristive model is proposed, which is based on experimental data of memristive devices. Moreover, the model is more suitable for the design of memristor-based synaptic circuits as compared with other memristive models. The effects of memristance variations are considered in the proposed model to evaluate the behavior of memristive synapses within memristor-based neural networks.
Keyword:
Crossbar array
memristor
neural network
synaptic circuits
threshold model
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4.9
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