Metal-based single electron transistors

doi:10.1116/1.589548

Metal-based single electron transistors

1997-07-01

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DOI：10.1116/1.589548

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Metal-based single electron transistors operating at liquid nitrogen temperature were fabricated. Multiple tunnel junctions with metal particles of about 3 nm in diameter were used to construct the transistors. In these transistors the gates are placed directly underneath the islands and separated only by a 10-nm-thick dielectric. The capacitance of the islands is less than 1 aF. Clear oscillations induced by gate bias voltage are observed in the current–voltage characteristics at 77 K.

Metal-based single electron transistors

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