.png){kind=icon}
返回
Modulating Cationic Ratios for High-Performance Transparent Solution-Processed Electronics
.png){kind=icon}
PRE
AI
DOI：10.1021/acsami.5b08880.png)
.png){kind=icon}
原文求助.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
Amorphous oxide semiconductors such as indium zinc tin oxide (IZTO) are considered favorites to serve as channel materials for thin film transistors (TFTs) because they combine high charge carrier mobility with high optical transmittance, allowing for the development of transparent electronics. Although the influence of relative cationic concentrations in determining the electronic properties have been studied in sputtered and PLD films, the development of printed transparent electronics hinges on such dependencies being explored for solution-processed systems. Here, we study solution-processed indium zinc tin oxide thin film transistors (TFTs) to investigate variation in their electrical properties with change in cationic composition. Charge transport mobility ranging from 0.3 to 20.3 cm(2)/(V s), subthreshold swing ranging from 1.2 to 8.4 V/dec, threshold voltage ranging from -50 to 5 V, and drain current on-off ratio ranging from 3 to 6 orders of magnitude were obtained by examining different compositions of the semiconductor films. Mobility was found to increase with the incorporation of large cations such as In3+ and Sn4+ due to the vast s-orbital overlap they can achieve when compared to the intercationic distance. Subthreshold swing decreased with an increase in Zn2+ concentration due to reduced interfacial state formation between the semiconductor and dielectric. The optimized transistor obtained at a compositional ratio of In/Zn/Sn = 1:1:1, exhibited a high field-effect mobility of 8.62 cm(2)/(V s), subthreshold swing of 1.75 V/dec, and current on-off ratio of 10(6). Such impressive performances reaffirm the promise of amorphous metal oxide semiconductors for printed electronics.
Keyword:
printed electronics
indium zinc tin oxide
thin film transistors
mobility
on-off ratio
activation energy
AI总结
对已上传原文的论文进行重点信息的提取，主要内容包括：简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
IF:
8.2
论文数:
6.1W
被引数:
38.7W
机构
引用论文
.png){kind=icon}
Effect Of Channel Layer Thickness On The Performance Of Indium-Zinc-Tin Oxide Thin Film Transistors Manufactured By Inkjet Printing沟道层厚度对喷墨打印铟锌锡氧化物薄膜晶体管性能的影响
PREAI
分享收藏Anomalous tin chemical bonding in indium-zinc-tin oxide films and their thin film transistor performance铟锌锡氧化物薄膜中的反常锡化学键合及其薄膜晶体管性能
PREAI
分享收藏
查看更多内容