.png){kind=icon}
.png){kind=icon}
Return
Molecular Storage Elements for Proton Memory Devices
.png){kind=icon}
PRE
AI
DOI：10.1002/adma.200801104.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Nonvolatile information storage using a molecular element comprising a proton-conducting polymeric layer (PCL) and a proton-trapping layer (PTL) is presented (see figure). Application of a positive voltage (write operation) to the top ion-blocking electrode (IBE) allows dissociation of neutral (n) molecules into anions (-) and protons (+), motion and trapping (storage) of protons in the PTL. A negative voltage (erase operation) moves back the trapped protons to the anions.
Keywords:
THIN-FILM TRANSISTORS
FIELD-EFFECT TRANSISTORS
GATE OXIDE
POLYMER
ELECTRONICS
ACIDITY
LAYER
IONS
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
26.8
Papers:
3.4W
Citations:
46.0W