Monolayer Semiconductor Auger Detector

Colin Chow

doi:10.1021/acs.nanolett.0c02190

2020-06-09

Jiaqiang Yan (Jiaqiang Yan)

DOI：10.1021/acs.nanolett.0c02190

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摘要

En 中文

Auger recombination in semiconductors is a many-body phenomenon in which the recombination of electrons and holes is accompanied by excitation of other charge carriers. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. Here, we employ a technique in which the Auger-excited carriers are detected by their ability to tunnel out of the semiconductor through a thin barrier, generating a current. We use vertical van der Waals heterostructures with monolayer WSe2 as the semiconductor, with hexagonal boron nitride as the tunnel barrier, and a graphite collector electrode. The Auger processes combined with resonant absorption produce characteristic negative photoconductance. We detect holes Auger-excited by both neutral and charged excitons and find that the Auger scattering is surprisingly strong under weak excitation. Our work expands the range of techniques available for probing relaxation processes in 2D materials.

Keyword:

van der Waals heterostructure

exciton-hole Auger scattering

tunneling barrier

Auger photocurrent

weak excitation

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期刊

Nano Letters

IF:

9.1

论文数:

2.7W

被引数:

16.5W

机构

University of Hong Kong

学者数:

4.1W

论文数: 3.9W

被引数: 10.1W

University of Washington

学者数:

8.0W

论文数: 7.0W

被引数: 12.5W

Sun Yat Sen University

学者数:

9.9W

论文数: 7.2W

被引数: 95

united states department of energy (doe)

学者数:

11.3W

论文数: 9.6W

被引数: 246

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