Monolithic 3D integration with 2D materials

doi:10.1038/s41928-024-01260-7

2024-10-09

PRE

Sangmoon Han

Ji‐Yun Moon

Sang‐Hoon Bae *

DOI：10.1038/s41928-024-01260-7

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摘要

En 中文

The monolithic 3D integration of 2D molybdenum disulfide memtransistors and graphene chemitransistors can be used to create near-sensor computing chips with high interconnect density and a vertical separation between tiers of less than 50 nm.

期刊

Nature Electronics

IF:

40.9

论文数:

1.7K

被引数:

2.1W

机构

washington university (wustl)

学者数:

5.5W

论文数: 4.5W

被引数: 70

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