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Monolithically integrating polarization-doped InGaN p-FET and GaN n-FET for complementary logic circuitry
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DOI：10.1126/sciadv.aec4563.png)
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Abstract
En 中文
Low-efficiency p-type impurity doping has long impeded the practical adoption of wide-bandgap semiconductors in integrated circuits (ICs). In wide-bandgap III-nitride semiconductors, the inherent polarization effects provide an alternative approach to engineering electrical properties. Here, we report the monolithic integration of polarization-doped InGaN p-channel FETs with polarization-doped GaN n-channel FETs for complementary logic (CL) circuitry. The enhancement-mode (E-mode) InGaN p-FET achieves a high current density exceeding 20 mA/mm. We construct a series of III-nitride CL building blocks, including inverter, ring oscillator (RO), NAND, NOR, RS latch, and 6T-SRAM. The inverter exhibits a high maximum voltage gain of 154.1 V/V, and the RO achieves a record short propagation delay per stage of 10.4 ns. Additionally, we demonstrate the monolithic integration of CL buffers with high-voltage GaN power transistors. These results establish the polarization-doped III-nitride CL platform as a promising solution for high-frequency power management ICs and harsh-environment electronics.
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12.5
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