MRAM makes its mark

Atsufumi Hirohata

doi:10.1038/s41928-022-00893-w

2022-12-02

PRE

Atsufumi Hirohata *

DOI：10.1038/s41928-022-00893-w

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摘要

En 中文

A compact and energy-efficient magnetoresistive random-access memory (MRAM) technology could help lower the power consumption of data storage and management.

期刊

Nature Electronics

IF:

40.9

论文数:

1.7K

被引数:

2.1W

机构

university of york - uk

学者数:

1.5W

论文数: 1.5W

被引数: 15

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