Multi-functional polymorphic memory based on 2D ferroelectric tunnel junctions

doi:10.1038/s41699-025-00595-9

2025-09-30

Md Abdullah-Al Kaiser *

Kayode Oluwaseyi Adebunmi

DOI：10.1038/s41699-025-00595-9

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摘要

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在现代数据密集型应用中，内存和处理器之间的分割会导致吞吐量降低、能效下降和延迟增加。功能内存系统通过在内存阵列中实现基本读写任务之外的操作来解决这一问题，例如存内计算（IMC）。非易失性存储器通过避免静态功耗损失来进一步提高效率。特别值得关注的是二维铁电隧道结（FTJs），例如基于MoS2的FTJs，因其具有紧凑尺寸、高开/关比和CMOS兼容性。本研究提出了一种新型内存设计，采用MoS2基FTJs通过铁电极化可靠存储数据，并支持多种存内功能。这些功能包括布尔逻辑、批量读取、抗变异性自参考读取，以及通过外围电路更改实现的可重构内容可寻址存储器功能。我们通过已制备的二维MoS2-FTJs的测量特性，以及使用GlobalFoundries的22 nm绝缘层上硅技术节点的模拟结果验证了这些多态行为。

期刊

npj 2D Materials and Applications

IF:

8.8

论文数:

767

被引数:

4.9K

机构

University of Wisconsin–Madison

学者数:

779

论文数: 336

被引数: 0

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