.png){kind=icon}
返回
Multi-Level Saturation Current Encoding in Two-Dimensional Ferroelectric Source-Gated Transistors
.png){kind=icon}
OA
AI
DOI：10.1002/adfm.77877.png)
.png){kind=icon}
.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
Synaptic devices for low-power neuromorphic systems require state variables that are robust against read-bias variations while supporting multi-level, non-volatile operation. Encoding synaptic states directly in voltage-invariant saturation current represents an attractive, yet underexplored approach, as it requires strong and well-defined current saturation that is difficult to achieve in conventional memristor or memtransistor architectures. Here, a reconfigurable 2D material–based Source-Gated Transistor (SGT) is demonstrated as a proof-of-concept ferroelectric memtransistor by integrating ferroelectric α-In2Se3 source contact with a high-mobility MoS2 channel. The device exhibits strong current saturation at ∼0.5 Vd with an output impedance of ≈8 GΩ. The saturation current is non-volatilely programmed into multiple levels spanning more than an order of magnitude via ferroelectric switching. Operando Kelvin-Probe Force Microscopy (KPFM) suggests that the strong saturation of the SGT is due to lateral depletion at the MoS2-In2Se3 interface. Scanning Photocurrent Microscopy (SPCM) reveals a ferroelectric switching-dependent photoresponse at the MoS2-In2Se3 interface, pointing to the built-in field at the heterointerface as the source of the lateral depletion. These results identify saturation current, rather than linear resistance, as a candidate programmable, non-volatile device parameter enabled by ferroelectric source-gated architectures, and suggest its potential application for read-bias-tolerant operation in future low-power neuromorphic devices.
Keyword:
2D ferroelectrics
operando Kelvin probe force microscopy
saturation current encoding
scanning photocurrent microscopy
source-gated memtransistors
AI总结
对已上传原文的论文进行重点信息的提取，主要内容包括：简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
IF:
19
论文数:
3.5W
被引数:
32.1W
机构
引用论文
Multi-Functional Platform for In-Memory Computing And Sensing Based on 2D Ferroelectric Semiconductor α-In2Se3基于二维铁电半导体 α-In2Se3的多功能内存计算和传感平台
OAAI
OAAI分享收藏Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices在vdW铁电 α-In2Se3结器件中堆叠选择的极化转换和相变.png)
NATURE COMMUNICATIONSOAAI
NATURE COMMUNICATIONSIF15.7
OAAI分享收藏Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure基于MoS2和CuInP2S6二维范德华异质结构的铁电场效应晶体管ACS NANO
ACS NANOIF16
PREAI
分享收藏Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materialsIn2Se3和其他III2-VI3范德华材料中固有二维铁电体的预测NATURE COMMUNICATIONSOAAI
NATURE COMMUNICATIONSIF15.7
OAAI分享收藏Intrinsic polarization coupling in 2D α-In2Se3 toward artificial synapse with multimode operations2D α-In2Se3中的本征极化耦合到具有多模操作的人工突触SMARTMAT
SMARTMATIF12.8
PREAI
分享收藏Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes层状 α-In2Se3纳米片中的平面外压电性和铁电性NANO LETTERSOAAI
NANO LETTERSIF9.1
OAAI分享收藏
查看更多内容